issue 4 - may 2006 1 www.zetex.com ? zetex semiconductors plc 2006 bsp75g 60v self-protected low-side intellifet tm mosfet switch summary continuous drain source voltage v ds =60v on-state resistance 550m nominal load current 1.4a (v in = 5v) clamping energy 550mj ordering information device marking bsp75g description self-protected low side mosfet. monolithic over temperature, over current, over voltage (active clamp) and esd protected logic level power mosfet intended as a general purpose switch. features ? short circuit protection with auto restart over-voltage protection (active clamp) thermal shutdown with auto restart over-current protection input protection (esd) high continuous current rating load dump protection (actively protects load) logic level input note: the tab is connected to the drain pin, and must be electrically isolated from the source pin. connection of significant copper to the tab is recommended for best thermal performance. device reel size (inches) tape width (mm) quantity per reel bsp75gta 7 12mm embossed 1,000 BSP75GTC 13 12mm embossed 4,000 sot223 d s d in
bsp75g issue 4 - may 2006 2 www.zetex.com ? zetex semiconductors plc 2006 functional block diagram applications especially suited for loads with a high in-rush current such as lamps and motors. all types of resistive, inductive and capacitive loads in switching applications. c compatible power switch for 12v and 24v dc applications. automotive rated. replaces electromechanical re lays and discrete circuits. linear mode capability - the current-limiting pr otection circuitry is designed to de-activate at low vds, in order not to compromise the load current during normal operation. the design maximum dc operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. s over voltage protection over current protection over temperature protection logic human body esd protection d in dv/dt limitation
bsp75g issue 4 - may 2006 3 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings notes: (a) for a device surface mounted on 37mm x 37mm x 1.6mm fr4 board with a high coverage of single sided 2oz weight copper. (b) for a device surface mounted on fr4 board and measured at t<=10s. (c) for a device mounted on fr4 board with the minimum copper required for electrical connections. parameter symbol limit unit continuous drain-source voltage v ds 60 v drain-source voltage for short circuit protection v ds(sc) 36 v continuous input voltage v in -0.2 ... +10 v peak input voltage v in -0.2 ... +20 v operating temperature range t j , -40 to +150 c storage temperature range t stg -55 to +150 c power dissipation at t a =25 c (a) p d 2.5 w continuous drain current @ v in =10v; t a =25c (a) i d 1.6 a continuous drain current @ v in =5v; t a =25c (a) i d 1.4 a pulsed drain current @ v in =10v i dm 5a continuous source current (body diode) (a) i s 3a pulsed source current (body diode) i s 5a unclamped single puls e inductive energy e as 550 mj load dump protection v loaddump 80 v electrostatic discharge (human body model) v esd 4000 v din humidity category, din 40 040 e iec climatic category, din iec 68-1 40/150/56 thermal resistance parameter symbol limit unit junction to ambient (a) r ja 50 c/w junction to ambient (b) r ja 24 c/w junction to ambient (c) r ja 208 c/w
bsp75g issue 4 - may 2006 4 www.zetex.com ? zetex semiconductors plc 2006 characteristics
bsp75g issue 4 - may 2006 5 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at ta mb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static characteristics drain-source clamp voltage v ds(az) 60 70 75 v i d =10ma off-state drain current i dss 0.1 3 a v ds =12v, v in =0v off-state drain current i dss 315 a v ds =32v, v in =0v input threshold voltage (*) notes: (*) protection features may operate outside spec for v in <4.5v. v in(th) 12.1 vv ds =v gs , i d =1ma input current i in 0.7 1.2 ma v in =+5v input current i in 1.5 2.7 ma v in =+7v input current i in 47mav in =+10v static drain-source on-state resistance r ds(on) 520 675 m v in =+5v, i d =0.7a static drain-source on-state resistance r ds(on) 385 550 m v in =+10v, i d =0.7a current limit (?) (?) the drain current is limited to a reduced value when v ds exceeds a safe level. i d(lim) 0.7 1.1 1.75 a v in =+5v, v ds >5v current limit (?) i d(lim) 234 av in =+10v, v ds >5v dynamic characteristics turn-on time (v in to 90% i d )t on 2.2 10 sr l =22 , v dd =12v, v in =0 to +10v turn-off time (v in to 90% i d )t off 13 20 sr l =22 , v dd =12v, v in =+10v to 0v slew rate on (70 to 50% v dd ) -dv ds /dt on 10 20 v/ sr l =22 , v dd =12v, v in =0 to +10v slew rate off (50 to 70% v dd )dv ds /dt off 3.2 10 v/ s r l =22 , v dd =12v, v in =+10v to 0v protection functions (?) (?) integrated protection functions are designed to prevent ic destruction under fault conditions described in the datasheet. fault conditions are considered as "outside" norm al operating range. protection functions are not designed for continuous, repetitive operation. required input voltage for over temperature protection v prot 4.5 v thermal overload trip temperature t jt 150 175 c thermal hysteresis 10 c unclamped single pulse inductive energy tj=25 c e as 550 mj i d(iso) =0.7a, v dd =32v unclamped single pulse inductive energy tj=150 c e as 200 mj i d(iso) =0.7a, v dd =32v inverse diode source drain voltage v sd 1v in =0v, -i d =1.4a
bsp75g issue 4 - may 2006 6 www.zetex.com ? zetex semiconductors plc 2006 characteristics
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bsp75g issue 4 - may 2006 8 www.zetex.com ? zetex semiconductors plc 2006 these offices are supported by agents and di stributors in major countries world-wide. this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - sot223 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches di m. millimeters inches min. max. min. max. min. max. min. max. a - 1.80 - 0.071 e 2.30 bsc 0.0905 bsc a1 0.02 0.10 0.0008 0.004 e1 4.60 bsc 0.181 bsc b 0.66 0.84 0.026 0.033 e 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 e1 3.30 3.70 0.130 0.146 c 0.23 0.33 0.009 0.013 l 0.90 - 0.355 - d 6.30 6.70 0.248 0.264 - - - - -
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